2N7002H6327XTSA2 vs 2N7002LT1G 比較
詳細並排比較 2N7002H6327XTSA2 由 Infineon 與 2N7002LT1G 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | 2N7002H6327XTSA2 | 2N7002LT1G |
|---|---|---|
| 品牌 | Infineon | onsemi |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | OptiMOS (Planar) | MOSFET |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 300 mA (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| On-State Resistance (RDS(on)) | 3 ohm max @ VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| 工作溫度範圍 | -55C to +150C (Tj) | [DATA_NEEDED: operating temperature range] |
| 封裝 | PG-SOT23 (SOT-23-3) | SOT-23-3 (TO-236) |
| 安裝類型 | Surface Mount | Surface Mount |
| Channel Mode | Enhancement | Enhancement Mode |
| MSL 等級 | 1 (per JEDEC J-STD-020) | — |
| RoHS 狀態 | Compliant | — |
| Lead-Free | Yes | — |
| Qualification | Industrial / Commercial Grade | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage VDSS | — | 60 V |
| Continuous Drain Current ID | — | 115 mA (Tc) |
| Power Dissipation PD | — | 225 mW (Ta) |
| Maximum RDS(on) | — | 7.5 ohm @ VGS = 5 V |
| Configuration | — | Single FET |
| 腳位數 | — | 3 |
| 類別 | — | Small Signal MOSFET |
| Manufacturer | — | onsemi (ON Semiconductor) |
| Lead Finish | — | [DATA_NEEDED: lead finish/plating] |
| Packaging | — | [DATA_NEEDED: packaging type] |