AS4C256M16D3L-12BCN vs K4B4G1646E-BYMA Comparison
Detailed side-by-side comparison of AS4C256M16D3L-12BCN by Alliance Memory and K4B4G1646E-BYMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Alliance Memory
AS4C256M16D3L-12BCN - 4Gbit DDR3L SDRAM 800MHz | Alliance Memory
AS4C256M16D3L-12BCN ✓ Active
Specification Comparison
| Parameter | AS4C256M16D3L-12BCN | K4B4G1646E-BYMA |
|---|---|---|
| Brand | Alliance Memory | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | — | $14.32 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gbit | — |
| Organization | 256M x 16 | 256M x 16 |
| Data Bus Width | 16 bit | — |
| Maximum Clock Frequency | 800 MHz | — |
| Data Rate | 1600 Mbps | 1866 Mbps/pin |
| CAS Latency | 20 ns | [DATA_NEEDED: CAS Latency] |
| Supply Voltage | 1.35 V | 1.35 V (1.28 V to 1.575 V) |
| Package | 96-FBGA (9x13 mm) | FBGA-96 |
| Mounting Style | SMD/SMT | — |
| Operating Temperature Range | 0C to +95C (Tc) | — |
| RoHS | Compliant | Compliant |
| Halogen Free | Yes | — |
| Interface Type | Parallel | — |
| Number of Pins | 96 | 96 |
| Density | — | 4 Gb |
| Clock Frequency | — | 933 MHz |
| Operating Temperature | — | 0°C to +95°C |
| Operating Current | — | 14 mA |
| Standby Current | — | 2 mA, 3 mA |
| Mounting Type | — | Surface Mount |
| Burst Length | — | [DATA_NEEDED: Burst Length] |