AS4C512M16D4-75BIN vs NT5AD512M16C4-JR Comparison
Detailed side-by-side comparison of AS4C512M16D4-75BIN by Alliance Memory and NT5AD512M16C4-JR by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Alliance Memory
AS4C512M16D4-75BIN - 8Gbit DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4-75BIN ✓ Active
Specification Comparison
| Parameter | AS4C512M16D4-75BIN | NT5AD512M16C4-JR |
|---|---|---|
| Brand | Alliance Memory | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | — | $73.75 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit | — |
| Memory Organization | 512M x 16 | — |
| Clock Frequency | 1.333 GHz | — |
| Access Time | 18 ns | — |
| Write Cycle Time | 15 ns | — |
| Supply Voltage | 1.2 V | — |
| Package | 96-FBGA (7.5x13) | TFBGA-96 |
| Operating Temperature | -40°C to +95°C | — |
| Mounting Type | Surface Mount | — |
| Interface | POD | — |
| Data Rate | 2666 Mbps | 1.6 GHz (DDR4-3200) |
| Number of Pins | 96 | — |
| RoHS Status | Compliant | — |
| Features | Auto self-refresh, auto precharge, asynchronous reset, output enable, CRC, data mask, write leveling, dynamic ODT, ZQ calibration | — |
| Organization | — | 512M x16 |
| Density | — | 8 Gbit |
| Supply Voltage (VDD) | — | 1.2 V |
| Operating Temperature Range | — | 0°C to +95°C |
| Standby Current | — | 0.023 A (max) |
| Number of Terminals | — | 96 |
| Auto Self-Refresh | — | Yes |
| Built-in Temperature Sensor | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Write Leveling | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| RoHS | — | Compliant |