AS4C512M16D4-75BIN vs NT5AD512M16C4-JR Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng AS4C512M16D4-75BIN sa pamamagitan ng Alliance Memory at NT5AD512M16C4-JR sa pamamagitan ng Nanya Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Alliance Memory
AS4C512M16D4-75BIN - 8Gbit DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4-75BIN ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | AS4C512M16D4-75BIN | NT5AD512M16C4-JR |
|---|---|---|
| Brand | Alliance Memory | Nanya Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $73.75 |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 8 Gbit | — |
| Memory Organization | 512M x 16 | — |
| Clock Frequency | 1.333 GHz | — |
| Access Time | 18 ns | — |
| Write Cycle Time | 15 ns | — |
| Volte ng Pagbibigay | 1.2 V | — |
| Packhaging | 96-FBGA (7.5x13) | TFBGA-96 |
| Temperature na Operasyon | -40°C to +95°C | — |
| Uri ng Pagpapasok | Surface Mount | — |
| Interface | POD | — |
| Rate ng Data | 2666 Mbps | 1.6 GHz (DDR4-3200) |
| Bilang ng Pins | 96 | — |
| Tindminan RoHS | Compliant | — |
| Mga Karakteristika | Auto self-refresh, auto precharge, asynchronous reset, output enable, CRC, data mask, write leveling, dynamic ODT, ZQ calibration | — |
| Organisasyon | — | 512M x16 |
| Density | — | 8 Gbit |
| Supply Voltage (VDD) | — | 1.2 V |
| Hanay ng Temperature na Operasyon | — | 0°C to +95°C |
| Standby Current | — | 0.023 A (max) |
| Number of Terminals | — | 96 |
| Auto Self-Refresh | — | Yes |
| Built-in Temperature Sensor | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Write Leveling | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| RoHS | — | Compliant |