AS4C512M16D4-75BIN vs NT5AD512M16C4-JR Perbandingan
Perbandingan bersamaan detil AS4C512M16D4-75BIN dari Alliance Memory dan NT5AD512M16C4-JR dari Nanya Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Alliance Memory
AS4C512M16D4-75BIN - 8Gbit DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4-75BIN ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | AS4C512M16D4-75BIN | NT5AD512M16C4-JR |
|---|---|---|
| Merek | Alliance Memory | Nanya Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $73,75 |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 8 Gbit | — |
| Memory Organization | 512M x 16 | — |
| Clock Frequency | 1.333 GHz | — |
| Access Time | 18 ns | — |
| Write Cycle Time | 15 ns | — |
| Tegangan Pemuat | 1.2 V | — |
| Paket | 96-FBGA (7.5x13) | TFBGA-96 |
| Suhu Kerja | -40°C to +95°C | — |
| Tipe Mounting | Surface Mount | — |
| Antarmuka | POD | — |
| Laju Data | 2666 Mbps | 1.6 GHz (DDR4-3200) |
| Jumlah Pin | 96 | — |
| Status RoHS | Compliant | — |
| Fitur | Auto self-refresh, auto precharge, asynchronous reset, output enable, CRC, data mask, write leveling, dynamic ODT, ZQ calibration | — |
| Organisasi | — | 512M x16 |
| Density | — | 8 Gbit |
| Supply Voltage (VDD) | — | 1.2 V |
| Rentang Suhu Kerja | — | 0°C to +95°C |
| Standby Current | — | 0.023 A (max) |
| Number of Terminals | — | 96 |
| Auto Self-Refresh | — | Yes |
| Built-in Temperature Sensor | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Write Leveling | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| RoHS | — | Compliant |