BSC022N04LS6ATMA1 vs BSC047N08NS3GATMA1 Comparison

Detailed side-by-side comparison of BSC022N04LS6ATMA1 by Infineon and BSC047N08NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC022N04LS6ATMA1

BSC022N04LS6ATMA1 - 40V 2.2mOhm OptiMOS 6 N-Ch MOSFET | Infineon

BSC022N04LS6ATMA1 βœ“ Active
Infineon
BSC047N08NS3GATMA1 BSC047N08NS3GATMA1 - 80V 100A 4.7mOhm N-Ch MOSFET | Infineon

BSC047N08NS3GATMA1 - 80V 100A 4.7mOhm N-Ch MOSFET | Infineon

BSC047N08NS3GATMA1 βœ“ Active

Specification Comparison

Parameter BSC022N04LS6ATMA1 BSC047N08NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.66 $0.46
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOSβ„’ 6 (N-channel trench) OptiMOSβ„’ 3 (N-channel trench)
Drain-Source Voltage (VDS) 40 V β€”
Continuous Drain Current (ID) at Ta 27 A 18 A
Continuous Drain Current (ID) at Tc 100 A 100 A
Maximum Pulsed Drain Current (IDM) 139 A β€”
On-Resistance RDS(on) max 2.2 mOhm at VGS=10 V 4.7 mOhm at VGS=10 V
Power Dissipation (Ta) 3 W 2.5 W
Power Dissipation (Tc) 79 W β€”
Package SuperSO8 5x6 (PG-TDSON-8-1) PG-TDSON-8-1 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
Channel Type N-Channel β€”
Pin Count 8 β€”
Operating Temperature -55 C to +175 C (junction) β€”
RoHS Status Compliant β€”
Part Number β€” BSC047N08NS3GATMA1
Drain-Source Voltage (VDS) max β€” 80 V
Power Dissition (Tc) β€” 125 W
Gate Threshold Voltage (VGS th) β€” Normal level (typ 1.7 V)
Avalanche Rated β€” 100% tested
Operating Temperature Range β€” -55 Β°C to +175 Β°C (Tj)
RoHS / Halogen-Free β€” RoHS compliant, Halogen-free

Datasheets & Resources

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