BSC022N04LS6ATMA1 vs BSC047N08NS3GATMA1 Comparison
Detailed side-by-side comparison of BSC022N04LS6ATMA1 by Infineon and BSC047N08NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC022N04LS6ATMA1 - 40V 2.2mOhm OptiMOS 6 N-Ch MOSFET | Infineon
BSC022N04LS6ATMA1 ✓ Active
Specification Comparison
| Parameter | BSC022N04LS6ATMA1 | BSC047N08NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS™ 6 (N-channel trench) | OptiMOS™ 3 (N-channel trench) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Ta | 27 A | 18 A |
| Continuous Drain Current (ID) at Tc | 100 A | 100 A |
| Maximum Pulsed Drain Current (IDM) | 139 A | — |
| On-Resistance RDS(on) max | 2.2 mOhm at VGS=10 V | 4.7 mOhm at VGS=10 V |
| Power Dissipation (Ta) | 3 W | 2.5 W |
| Power Dissipation (Tc) | 79 W | — |
| Package | SuperSO8 5x6 (PG-TDSON-8-1) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Pin Count | 8 | — |
| Operating Temperature | -55 C to +175 C (junction) | — |
| RoHS Status | Compliant | — |
| Part Number | — | BSC047N08NS3GATMA1 |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Power Dissition (Tc) | — | 125 W |
| Gate Threshold Voltage (VGS th) | — | Normal level (typ 1.7 V) |
| Avalanche Rated | — | 100% tested |
| Operating Temperature Range | — | -55 °C to +175 °C (Tj) |
| RoHS / Halogen-Free | — | RoHS compliant, Halogen-free |