BSC022N04LS6ATMA1 vs BSC047N08NS3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC022N04LS6ATMA1 sa pamamagitan ng Infineon at BSC047N08NS3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC022N04LS6ATMA1 - 40V 2.2mOhm OptiMOS 6 N-Ch MOSFET | Infineon
BSC022N04LS6ATMA1 ✓ NakahandaInfineon
BSC047N08NS3GATMA1 - 80V 100A 4.7mOhm N-Ch MOSFET | Infineon
BSC047N08NS3GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC022N04LS6ATMA1 | BSC047N08NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS™ 6 (N-channel trench) | OptiMOS™ 3 (N-channel trench) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Ta | 27 A | 18 A |
| Continuous Drain Current (ID) at Tc | 100 A | 100 A |
| Maximum Pulsed Drain Current (IDM) | 139 A | — |
| On-Resistance RDS(on) max | 2.2 mOhm at VGS=10 V | 4.7 mOhm at VGS=10 V |
| Power Dissipation (Ta) | 3 W | 2.5 W |
| Power Dissipation (Tc) | 79 W | — |
| Packhaging | SuperSO8 5x6 (PG-TDSON-8-1) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Bilang ng Pin | 8 | — |
| Temperature na Operasyon | -55 C to +175 C (junction) | — |
| Tindminan RoHS | Compliant | — |
| Part Number | — | BSC047N08NS3GATMA1 |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Power Dissition (Tc) | — | 125 W |
| Gate Threshold Voltage (VGS th) | — | Normal level (typ 1.7 V) |
| Avalanche Rated | — | 100% tested |
| Hanay ng Temperature na Operasyon | — | -55 °C to +175 °C (Tj) |
| RoHS / Halogen-Free | — | RoHS compliant, Halogen-free |