BSC052N08NS5ATMA1 vs BSC033N08NS5SCATMA1 Comparison

Detailed side-by-side comparison of BSC052N08NS5ATMA1 by Infineon and BSC033N08NS5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC052N08NS5ATMA1

BSC052N08NS5ATMA1 - 80V 95A 5.2mΞ© OptiMOS 5 N-FET | Infineon

BSC052N08NS5ATMA1 βœ“ Active
Infineon
BSC033N08NS5SCATMA1

BSC033N08NS5SCATMA1 - 80V 3.3mOhm N-Ch MOSFET | Infineon

BSC033N08NS5SCATMA1 βœ“ Active

Specification Comparison

Parameter BSC052N08NS5ATMA1 BSC033N08NS5SCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.52 $0.62
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC052N08NS5ATMA1 β€”
Technology OptiMOS 5 Trench (OptiMOS 5)
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 80 V 80 V
Continuous Drain Current (ID, Tc) 95 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
On-Resistance RDS(on) max @ VGS=10V 5.2 mΞ© β€”
Gate-Source Voltage (VGS) Β±20 V +/- 20 V
Gate Threshold Voltage VGS(th) typ 2.5-3.0 V β€”
Total Power Dissipation (Tc) 83 W β€”
Total Power Dissipation (Ta) 2.5 W β€”
Operating Junction Temperature -55C to +150C β€”
Package PG-TDSON-8 (SuperSO8) 5x6 mm PG-WSON-8-2 (SuperSO8 DSC)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
MSL Level 1 (unlimited) 1
Series β€” OptiMOS 5
FET Type β€” N-Channel
Continuous Drain Current (Tc) β€” 144 A
Power Dissipation (Tc) β€” 136 W
RDS(on) max @ VGS=10V β€” 3.3 mOhm
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical value]
Thermal Resistance RthJC β€” 0.86 K/W
Operating Temperature Range β€” -55C to +175C
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical value]

Datasheets & Resources

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