BSS87H6327FTSA1 vs BSR802NL6327HTSA1 比較

詳細並排比較 BSS87H6327FTSA1 由 Infineon 與 BSR802NL6327HTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSS87H6327FTSA1 BSS87H6327FTSA1 - 240V N-Ch MOSFET, 260mA, SOT-89 | Infineon

BSS87H6327FTSA1 - 240V N-Ch MOSFET, 260mA, SOT-89 | Infineon

BSS87H6327FTSA1 ✓ 啟用中
Infineon
BSR802NL6327HTSA1 BSR802NL6327HTSA1 - 20V N-Ch 3.7A OptiMOS 2 MOSFET | Infineon

BSR802NL6327HTSA1 - 20V N-Ch 3.7A OptiMOS 2 MOSFET | Infineon

BSR802NL6327HTSA1 ✓ 啟用中

規格比較

參數 BSS87H6327FTSA1 BSR802NL6327HTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel enhancement-mode —
Drain-Source Voltage (VDS) 240 V —
Continuous Drain Current (ID) 260 mA (Ta) —
Power Dissipation (PD) 1 W (Ta) —
Drain-Source On-Resistance (RDS(on)) 6 ohm max at VGS=10V —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: VGS(th) typical value]
封裝 PG-SOT89-4-2 (SOT-89) PG-SC59-3 (SC-59 / SOT-346)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55C to +150C (junction) —
腳位數 3 (Gate / Drain / Source) 3
Automotive Qualification AEC-Q101 qualified —
RoHS 狀態 Compliant Compliant
Lead-Free / Pb-Free Yes (Pb-free plating) —
MSL 等級 1 (per JEDEC J-STD-020) —
Process Technology Vertical DMOS —
Manufacturer — Infineon Technologies
Part Number — BSR802NL6327HTSA1
Technology — OptiMOS 2 (N-Channel Trench MOSFET)
Channel Type — N-Channel
Drain-Source Voltage (VDS) max — 20 V
Continuous Drain Current (ID) max — 3.7 A (Ta=25C)
Power Dissipation (PD) max — 500 mW (Ta=25C)
On-Resistance (RDS(on)) typ — 23 mOhm @ VGS=4.5 V
工作接面溫度 — -55C to +150C
Qualification — Automotive

資料表與資源

瀏覽所有產品 建立 BOM 索取報價