BSZ065N03LSATMA1 vs BSZ036NE2LSATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSZ065N03LSATMA1 sa pamamagitan ng Infineon at BSZ036NE2LSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSZ036NE2LSATMA1 - 25V N-Channel OptiMOS Power MOSFET | Infineon
BSZ036NE2LSATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSZ065N03LSATMA1 | BSZ036NE2LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 30V | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | 25 V |
| Continuous Drain Current (ID) at TA=25C | 12 A | 16 A |
| Continuous Drain Current (ID) at TC=25C | 40 A | 40 A |
| Power Dissipation (PD) at TA=25C | 2.1 W | 2.1 W |
| Power Dissipation (PD) at TC=25C | 26 W | 37 W |
| Packhaging / Kaso | PG-TSDSON-8-FL (S308) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | Single |
| Technology | Trench MOSFET (OptiMOS) | — |
| Hanay ng Temperature na Operasyon | -55C to +150C (junction) | -55C to +150C |
| Level ng MSL | 1 | 1 (Unlimited) |
| Tindminan RoHS | Compliant | Compliant |
| Gate Drive (typical) | 4.5 V | — |
| Product Family | — | OptiMOS 25V |
| Polarity / Channel Type | — | N-Channel |
| Packhaging | — | PG-TSDSON-8-FL (5x6 mm) |
| Lead-Free | — | Yes |
| Gate Drive | — | Logic-level compatible |