BTH62004ESAXUMA1 vs BTM9011EPXUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BTH62004ESAXUMA1 sa pamamagitan ng Infineon at BTM9011EPXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro BTH62004ESAXUMA1 BTM9011EPXUMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Motor Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Product Type Smart High-Side Power Switch —
Family PROFET+ 48V —
Number of Channels 4 —
Topolohiya 4 x High-Side (1:1) Full-bridge (H-bridge) with integrated power MOSFETs
On-State Resistance (RDS(on)) 200 mΩ typical per channel —
Nominal Load Current per Channel 1 A —
Supply Voltage Range Up to 54 V —
Load-Dump Tolerance 60 V (transient, per datasheet) —
Power Transistor Technology N-channel vertical power MOSFET with charge pump —
Current Sense Diagnosis Yes (analog IS pin) —
Protection Features Over-temperature, over-voltage, short-circuit, reverse battery —
Hanay ng Temperature na Operasyon -40 °C to +150 °C junction —
Packhaging PG-TSDSO-24-21 (exposed pad) PG-TSDSO-14 with exposed pad
Uri ng Pagpapasok Surface Mount Surface Mount
Automotive Qualification AEC-Q100 qualified AEC-Q100
Output Current Limit — 10 A (typ)
Path Resistance (per HS+LS) — 175 mΩ typical at 25 °C
Pulse Current (tpulse ≤ 1 s at 85 °C) — 5.2 A
Pulse Current (tpulse ≤ 10 s at 85 °C) — 4.2 A
Supply Voltage Range (normal) — 7 V to 18 V
Supply Voltage Range (extended) — 4.5 V to 40 V
PWM Frequency — up to 20 kHz
Interface — SPI (status, configuration, diagnostics)
Current Limitation — Min, integrated
Technology — BCD (Bipolar-CMOS-DMOS) monolithic
Operating Temperature (junction) — -40 °C to +150 °C

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