BTH62004ESAXUMA1 vs BTM9011EPXUMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BTH62004ESAXUMA1 disebabkan oleh Infineon dan BTM9011EPXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BTH62004ESAXUMA1 - 4-Ch 200mΩ 48V Smart High-Side Switch | Infineon
BTH62004ESAXUMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BTH62004ESAXUMA1 | BTM9011EPXUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Motor Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Product Type | Smart High-Side Power Switch | — |
| Family | PROFET+ 48V | — |
| Number of Channels | 4 | — |
| Tetstruktur | 4 x High-Side (1:1) | Full-bridge (H-bridge) with integrated power MOSFETs |
| On-State Resistance (RDS(on)) | 200 mΩ typical per channel | — |
| Nominal Load Current per Channel | 1 A | — |
| Supply Voltage Range | Up to 54 V | — |
| Load-Dump Tolerance | 60 V (transient, per datasheet) | — |
| Power Transistor Technology | N-channel vertical power MOSFET with charge pump | — |
| Current Sense Diagnosis | Yes (analog IS pin) | — |
| Protection Features | Over-temperature, over-voltage, short-circuit, reverse battery | — |
| Gambaran Suhu Operasi | -40 °C to +150 °C junction | — |
| Kemasan | PG-TSDSO-24-21 (exposed pad) | PG-TSDSO-14 with exposed pad |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q100 |
| Output Current Limit | — | 10 A (typ) |
| Path Resistance (per HS+LS) | — | 175 mΩ typical at 25 °C |
| Pulse Current (tpulse ≤ 1 s at 85 °C) | — | 5.2 A |
| Pulse Current (tpulse ≤ 10 s at 85 °C) | — | 4.2 A |
| Supply Voltage Range (normal) | — | 7 V to 18 V |
| Supply Voltage Range (extended) | — | 4.5 V to 40 V |
| PWM Frequency | — | up to 20 kHz |
| Antaramuka | — | SPI (status, configuration, diagnostics) |
| Current Limitation | — | Min, integrated |
| Technology | — | BCD (Bipolar-CMOS-DMOS) monolithic |
| Operating Temperature (junction) | — | -40 °C to +150 °C |