BTH62004ESAXUMA1 vs BTM9011EPXUMA1 Perbandingan

Perbandingan bersamaan detil BTH62004ESAXUMA1 dari Infineon dan BTM9011EPXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BTH62004ESAXUMA1 BTM9011EPXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Motor Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Smart High-Side Power Switch —
Family PROFET+ 48V —
Number of Channels 4 —
Topologi 4 x High-Side (1:1) Full-bridge (H-bridge) with integrated power MOSFETs
On-State Resistance (RDS(on)) 200 mΩ typical per channel —
Nominal Load Current per Channel 1 A —
Supply Voltage Range Up to 54 V —
Load-Dump Tolerance 60 V (transient, per datasheet) —
Power Transistor Technology N-channel vertical power MOSFET with charge pump —
Current Sense Diagnosis Yes (analog IS pin) —
Protection Features Over-temperature, over-voltage, short-circuit, reverse battery —
Rentang Suhu Kerja -40 °C to +150 °C junction —
Paket PG-TSDSO-24-21 (exposed pad) PG-TSDSO-14 with exposed pad
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q100 qualified AEC-Q100
Output Current Limit — 10 A (typ)
Path Resistance (per HS+LS) — 175 mΩ typical at 25 °C
Pulse Current (tpulse ≤ 1 s at 85 °C) — 5.2 A
Pulse Current (tpulse ≤ 10 s at 85 °C) — 4.2 A
Supply Voltage Range (normal) — 7 V to 18 V
Supply Voltage Range (extended) — 4.5 V to 40 V
PWM Frequency — up to 20 kHz
Antarmuka — SPI (status, configuration, diagnostics)
Current Limitation — Min, integrated
Technology — BCD (Bipolar-CMOS-DMOS) monolithic
Operating Temperature (junction) — -40 °C to +150 °C

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