BTH62004ESAXUMA1 vs BTM9011EPXUMA1 比較

詳細並排比較 BTH62004ESAXUMA1 由 Infineon 與 BTM9011EPXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 BTH62004ESAXUMA1 BTM9011EPXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Motor Drivers
生命週期狀態 啟用中 啟用中
Product Type Smart High-Side Power Switch —
Family PROFET+ 48V —
Number of Channels 4 —
拓撲 4 x High-Side (1:1) Full-bridge (H-bridge) with integrated power MOSFETs
On-State Resistance (RDS(on)) 200 mΩ typical per channel —
Nominal Load Current per Channel 1 A —
Supply Voltage Range Up to 54 V —
Load-Dump Tolerance 60 V (transient, per datasheet) —
Power Transistor Technology N-channel vertical power MOSFET with charge pump —
Current Sense Diagnosis Yes (analog IS pin) —
Protection Features Over-temperature, over-voltage, short-circuit, reverse battery —
工作溫度範圍 -40 °C to +150 °C junction —
封裝 PG-TSDSO-24-21 (exposed pad) PG-TSDSO-14 with exposed pad
安裝類型 Surface Mount Surface Mount
Automotive Qualification AEC-Q100 qualified AEC-Q100
Output Current Limit — 10 A (typ)
Path Resistance (per HS+LS) — 175 mΩ typical at 25 °C
Pulse Current (tpulse ≤ 1 s at 85 °C) — 5.2 A
Pulse Current (tpulse ≤ 10 s at 85 °C) — 4.2 A
Supply Voltage Range (normal) — 7 V to 18 V
Supply Voltage Range (extended) — 4.5 V to 40 V
PWM Frequency — up to 20 kHz
介面 — SPI (status, configuration, diagnostics)
Current Limitation — Min, integrated
Technology — BCD (Bipolar-CMOS-DMOS) monolithic
Operating Temperature (junction) — -40 °C to +150 °C

資料表與資源

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