BTH62004ESAXUMA1 vs BTM9011EPXUMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma BTH62004ESAXUMA1 tarafından Infineon ve BTM9011EPXUMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
BTH62004ESAXUMA1 - 4-Ch 200mΩ 48V Smart High-Side Switch | Infineon
BTH62004ESAXUMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | BTH62004ESAXUMA1 | BTM9011EPXUMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Motor Drivers |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Product Type | Smart High-Side Power Switch | — |
| Family | PROFET+ 48V | — |
| Number of Channels | 4 | — |
| Ağ Yapısı | 4 x High-Side (1:1) | Full-bridge (H-bridge) with integrated power MOSFETs |
| On-State Resistance (RDS(on)) | 200 mΩ typical per channel | — |
| Nominal Load Current per Channel | 1 A | — |
| Supply Voltage Range | Up to 54 V | — |
| Load-Dump Tolerance | 60 V (transient, per datasheet) | — |
| Power Transistor Technology | N-channel vertical power MOSFET with charge pump | — |
| Current Sense Diagnosis | Yes (analog IS pin) | — |
| Protection Features | Over-temperature, over-voltage, short-circuit, reverse battery | — |
| İşletim Sıcaklığı Aralığı | -40 °C to +150 °C junction | — |
| Paket | PG-TSDSO-24-21 (exposed pad) | PG-TSDSO-14 with exposed pad |
| Montaj Türü | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q100 |
| Output Current Limit | — | 10 A (typ) |
| Path Resistance (per HS+LS) | — | 175 mΩ typical at 25 °C |
| Pulse Current (tpulse ≤ 1 s at 85 °C) | — | 5.2 A |
| Pulse Current (tpulse ≤ 10 s at 85 °C) | — | 4.2 A |
| Supply Voltage Range (normal) | — | 7 V to 18 V |
| Supply Voltage Range (extended) | — | 4.5 V to 40 V |
| PWM Frequency | — | up to 20 kHz |
| Arayüz | — | SPI (status, configuration, diagnostics) |
| Current Limitation | — | Min, integrated |
| Technology | — | BCD (Bipolar-CMOS-DMOS) monolithic |
| Operating Temperature (junction) | — | -40 °C to +150 °C |