BTT60101ERBXUMA1 vs BTT62001ENAXUMA1 Perbandingan

Perbandingan bersamaan detil BTT60101ERBXUMA1 dari Infineon dan BTT62001ENAXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BTT60101ERBXUMA1 BTT62001ENAXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Smart High-Side Power Switch Smart High-Side Power Switch
Number of Channels 1 —
On-State Resistance (Typ) 10 mΩ —
Continuous Load Current 9 A 1.5 A
Supply Voltage Range 5 V to 36 V —
Reverse Battery Protection up to -36 V —
Rentang Suhu Kerja -40 °C to +150 °C —
Input Control Logic Active High —
Diagnostic Output Status pin (ST) and current sense (IS) Current Sense (IS) pin
Topologi N-Channel vertical MOSFET with charge pump 1:1 N-Channel High-Side
Process Technology Infineon Smart6 —
Paket PG-TDSO-14-11 (SOIC-14-EP, Exposed Pad) PG-TDSO-8-31 (DSO-8 with exposed pad)
Tipe Mounting Surface Mount Surface Mount
Targeted Lamp Load 5 × P21W 24 V or 1 × H55W 12 V —
Compliance RoHS —
On-State Resistance (Ron) — 200 mΩ (typical)
Operating Voltage Range — 5 V to 48 V
Technology — Smart6 HV (N-channel vertical MOSFET with charge pump)
Protection Features — Overload, Short-Circuit, Over-Temperature, Over-Voltage, Reverse Battery
Lamp Drive Capability — 1 × R10W at 24 V or 1 × R5W at 12 V
Suhu Kerja — -40 °C to +150 °C junction
Level MSL — 2A (4 weeks)
ECCN — EAR99
REACH Status — REACH Unaffected

Spek dan Sumber

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