CSD13302W vs CSD15571Q2 Comparison

Detailed side-by-side comparison of CSD13302W by Texas Instruments and CSD15571Q2 by Texas Instruments. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Texas Instruments
CSD13302W CSD13302W - 12V N-Channel NexFET MOSFET | Texas Instruments

CSD13302W - 12V N-Channel NexFET MOSFET | Texas Instruments

CSD13302W ✓ Active
Texas Instruments
CSD15571Q2 CSD15571Q2 - 20V N-Channel NexFET MOSFET | Texas Instruments

CSD15571Q2 - 20V N-Channel NexFET MOSFET | Texas Instruments

CSD15571Q2 ✓ Active

Specification Comparison

Parameter CSD13302W CSD15571Q2
Brand Texas Instruments Texas Instruments
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.19 $0.19
Technology NexFET NexFET
Polarity N-Channel N-Channel
Drain-Source Voltage (VDS) 12 V —
Continuous Drain Current (ID) 1.6 A (Ta=25°C) —
On-Resistance (RDS(on)) 14.6 mΩ (typ) at VGS=4.5V —
Gate Charge (Qg) 4.1 nC at VGS=4.5V [DATA_NEEDED: Gate Charge]
Threshold Voltage (VGS(th)) 0.9 V —
Maximum Gate-Source Voltage ±8 V —
Power Dissipation (PD) 1.8 W (Ta=25°C) —
Package 4-DSBGA (1x1) WSON (DQK) 6-pin, 2 mm x 2 mm
Mounting Type Surface Mount Surface Mount
Height 0.4 mm —
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Operating Temperature Range -55°C to +150°C [DATA_NEEDED: Operating Temperature Range]
Drain-Source Voltage (Vds) — 20 V
Continuous Drain Current (Id) — 22 A (Ta=25°C)
On-Resistance (Rds(on)) — 19.2 mΩ
Power Dissipation (Pd) — 2.5 W (Ta=25°C)
Gate Threshold Voltage (Vgs(th)) — 1.1 V (typical)
Number of Channels — 1
Maximum Power Dissipation — 2.5 W

Datasheets & Resources

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