CSD13302W vs CSD15571Q2 对比
详细并排对比 CSD13302W 出自 Texas Instruments 和 CSD15571Q2 出自 Texas Instruments。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | CSD13302W | CSD15571Q2 |
|---|---|---|
| 品牌 | Texas Instruments | Texas Instruments |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.19 | $0.19 |
| Technology | NexFET | NexFET |
| Polarity | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 12 V | — |
| Continuous Drain Current (ID) | 1.6 A (Ta=25°C) | — |
| On-Resistance (RDS(on)) | 14.6 mΩ (typ) at VGS=4.5V | — |
| Gate Charge (Qg) | 4.1 nC at VGS=4.5V | [DATA_NEEDED: Gate Charge] |
| Threshold Voltage (VGS(th)) | 0.9 V | — |
| Maximum Gate-Source Voltage | ±8 V | — |
| Power Dissipation (PD) | 1.8 W (Ta=25°C) | — |
| 封装 | 4-DSBGA (1x1) | WSON (DQK) 6-pin, 2 mm x 2 mm |
| 安装类型 | Surface Mount | Surface Mount |
| Height | 0.4 mm | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| 工作温度范围 | -55°C to +150°C | [DATA_NEEDED: Operating Temperature Range] |
| Drain-Source Voltage (Vds) | — | 20 V |
| Continuous Drain Current (Id) | — | 22 A (Ta=25°C) |
| On-Resistance (Rds(on)) | — | 19.2 mΩ |
| Power Dissipation (Pd) | — | 2.5 W (Ta=25°C) |
| Gate Threshold Voltage (Vgs(th)) | — | 1.1 V (typical) |
| Number of Channels | — | 1 |
| Maximum Power Dissipation | — | 2.5 W |