CSD13302W vs CSD15571Q2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci CSD13302W disebabkan oleh Texas Instruments dan CSD15571Q2 disebabkan oleh Texas Instruments. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | CSD13302W | CSD15571Q2 |
|---|---|---|
| Merek | Texas Instruments | Texas Instruments |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | NexFET | NexFET |
| Polarity | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 12 V | — |
| Continuous Drain Current (ID) | 1.6 A (Ta=25°C) | — |
| On-Resistance (RDS(on)) | 14.6 mΩ (typ) at VGS=4.5V | — |
| Gate Charge (Qg) | 4.1 nC at VGS=4.5V | [DATA_NEEDED: Gate Charge] |
| Threshold Voltage (VGS(th)) | 0.9 V | — |
| Maximum Gate-Source Voltage | ±8 V | — |
| Power Dissipation (PD) | 1.8 W (Ta=25°C) | — |
| Kemasan | 4-DSBGA (1x1) | WSON (DQK) 6-pin, 2 mm x 2 mm |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Height | 0.4 mm | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Gambaran Suhu Operasi | -55°C to +150°C | [DATA_NEEDED: Operating Temperature Range] |
| Drain-Source Voltage (Vds) | — | 20 V |
| Continuous Drain Current (Id) | — | 22 A (Ta=25°C) |
| On-Resistance (Rds(on)) | — | 19.2 mΩ |
| Power Dissipation (Pd) | — | 2.5 W (Ta=25°C) |
| Gate Threshold Voltage (Vgs(th)) | — | 1.1 V (typical) |
| Number of Channels | — | 1 |
| Maximum Power Dissipation | — | 2.5 W |