DMN3190LDW-7 vs FDMC89521L Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci DMN3190LDW-7 disebabkan oleh Diodes Incorporated dan FDMC89521L disebabkan oleh onsemi. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Diodes Incorporated
DMN3190LDW-7 - 30V Dual N-Channel MOSFET Array | Diodes Inc | SOT-363
DMN3190LDW-7 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | DMN3190LDW-7 | FDMC89521L |
|---|---|---|
| Merek | Diodes Incorporated | onsemi |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | Dual N-Channel Enhancement Mode | 2 × N-Channel (Dual) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Gate-Source Voltage (VGS) | 20 V | — |
| Continuous Drain Current (ID) | 1 A | — |
| Power Dissipation (PD) | 320 mW | — |
| Kemasan | SOT-363 (SC-70-6) 6-pin | 8-Power33 (MLP-8 / Power 33, 3 mm × 3 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55C to +150C | — |
| Configuration | Dual, independent drains | Dual independent drain-source pairs |
| Technology | Silicon N-Channel MOSFET | POWERTRENCH shielded-gate trench MOSFET |
| Channel Mode | Enhancement | — |
| Aras MSL | 1 (unlimited) | 1 (per onsemi product page) |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Factory Pack Quantity | 3000 | — |
| Manufacturer | — | onsemi (Fairchild Semiconductor) |
| Drain-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) @ TA=25C | — | 8.2 A |
| Continuous Drain Current (Id) @ TC=25C | — | [DATA_NEEDED: TC-rated Id] |
| On-Resistance Rds(on) @ Vgs=10V | — | 17 mΩ |
| Gate-Source Voltage (Vgs) | — | ±20 V |
| Power Dissipation (TA=25C) | — | 1.9 W |
| Power Dissipation (TC=25C) | — | 16 W |
| Gambaran Suhu Operasi | — | -55C to +150C (Tj) |
| Body Diode | — | Integrated N-channel body diode |