DMN3190LDW-7 vs FDMC89521L Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng DMN3190LDW-7 sa pamamagitan ng Diodes Incorporated at FDMC89521L sa pamamagitan ng onsemi. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Diodes Incorporated
DMN3190LDW-7 - 30V Dual N-Channel MOSFET Array | Diodes Inc | SOT-363
DMN3190LDW-7 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | DMN3190LDW-7 | FDMC89521L |
|---|---|---|
| Brand | Diodes Incorporated | onsemi |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | Dual N-Channel Enhancement Mode | 2 × N-Channel (Dual) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Gate-Source Voltage (VGS) | 20 V | — |
| Continuous Drain Current (ID) | 1 A | — |
| Power Dissipation (PD) | 320 mW | — |
| Packhaging | SOT-363 (SC-70-6) 6-pin | 8-Power33 (MLP-8 / Power 33, 3 mm × 3 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -55C to +150C | — |
| Configuration | Dual, independent drains | Dual independent drain-source pairs |
| Technology | Silicon N-Channel MOSFET | POWERTRENCH shielded-gate trench MOSFET |
| Channel Mode | Enhancement | — |
| Level ng MSL | 1 (unlimited) | 1 (per onsemi product page) |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Factory Pack Quantity | 3000 | — |
| Manufacturer | — | onsemi (Fairchild Semiconductor) |
| Drain-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) @ TA=25C | — | 8.2 A |
| Continuous Drain Current (Id) @ TC=25C | — | [DATA_NEEDED: TC-rated Id] |
| On-Resistance Rds(on) @ Vgs=10V | — | 17 mΩ |
| Gate-Source Voltage (Vgs) | — | ±20 V |
| Power Dissipation (TA=25C) | — | 1.9 W |
| Power Dissipation (TC=25C) | — | 16 W |
| Hanay ng Temperature na Operasyon | — | -55C to +150C (Tj) |
| Body Diode | — | Integrated N-channel body diode |