DMN3190LDW-7 vs FDMC89521L 比較
詳細並排比較 DMN3190LDW-7 由 Diodes Incorporated 與 FDMC89521L 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Diodes Incorporated
DMN3190LDW-7 - 30V Dual N-Channel MOSFET Array | Diodes Inc | SOT-363
DMN3190LDW-7 ✓ 啟用中
規格比較
| 參數 | DMN3190LDW-7 | FDMC89521L |
|---|---|---|
| 品牌 | Diodes Incorporated | onsemi |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | Dual N-Channel Enhancement Mode | 2 × N-Channel (Dual) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Gate-Source Voltage (VGS) | 20 V | — |
| Continuous Drain Current (ID) | 1 A | — |
| Power Dissipation (PD) | 320 mW | — |
| 封裝 | SOT-363 (SC-70-6) 6-pin | 8-Power33 (MLP-8 / Power 33, 3 mm × 3 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55C to +150C | — |
| Configuration | Dual, independent drains | Dual independent drain-source pairs |
| Technology | Silicon N-Channel MOSFET | POWERTRENCH shielded-gate trench MOSFET |
| Channel Mode | Enhancement | — |
| MSL 等級 | 1 (unlimited) | 1 (per onsemi product page) |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Factory Pack Quantity | 3000 | — |
| Manufacturer | — | onsemi (Fairchild Semiconductor) |
| Drain-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) @ TA=25C | — | 8.2 A |
| Continuous Drain Current (Id) @ TC=25C | — | [DATA_NEEDED: TC-rated Id] |
| On-Resistance Rds(on) @ Vgs=10V | — | 17 mΩ |
| Gate-Source Voltage (Vgs) | — | ±20 V |
| Power Dissipation (TA=25C) | — | 1.9 W |
| Power Dissipation (TC=25C) | — | 16 W |
| 工作溫度範圍 | — | -55C to +150C (Tj) |
| Body Diode | — | Integrated N-channel body diode |