H5AN8G6NDJR-UHC vs AS4C512M16D4A-62BCN Comparison

Detailed side-by-side comparison of H5AN8G6NDJR-UHC by SK hynix and AS4C512M16D4A-62BCN by Alliance Memory. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5AN8G6NDJR-UHC H5AN8G6NDJR-UHC - 8Gb DDR4 SDRAM 3200Mbps | SK Hynix

H5AN8G6NDJR-UHC - 8Gb DDR4 SDRAM 3200Mbps | SK Hynix

H5AN8G6NDJR-UHC ✓ Active
Alliance Memory
AS4C512M16D4A-62BCN AS4C512M16D4A-62BCN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory

AS4C512M16D4A-62BCN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory

AS4C512M16D4A-62BCN ✓ Active

Specification Comparison

Parameter H5AN8G6NDJR-UHC AS4C512M16D4A-62BCN
Brand SK hynix Alliance Memory
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 8 Gb —
Organization 512M x 16 512M x 16
Speed Grade 3200 Mbps (PC4-25600) —
Supply Voltage (VDD) 1.2 V —
Supply Voltage (VDDQ) 1.2 V —
Number of Terminals 96 —
Package FBGA-96 (13x7.5 mm) 96-FBGA (7.5x13 mm)
Package Shape RECTANGULAR —
JESD-30 Code R-PBGA-B96 —
Maximum Operating Temperature 85 °C —
Minimum Operating Temperature 0 °C —
RoHS Compliant —
Lead-Free Yes —
Halogen Free Yes —
Additional Features Auto/Self Refresh, Auto Precharge, Asynchronous Reset, Data Mask, Dynamic ODT, ZQ Calibration, CRC, Write Leveling —
Memory Size — 8 Gbit
Supply Voltage — 1.2 V
Data Rate — 1600 MHz (3200 Mbps)
CAS Latency — 18 ns
Operating Temperature — 0°C to 95°C
Mounting Type — Surface Mount
JEDEC Standard — Compliant
Interface — POD (Pseudo Open Drain)
Refresh — Auto-refresh and self-refresh
On-Die Termination — Yes
RoHS Status — Compliant
Packaging — Tray

Datasheets & Resources

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