H5AN8G6NDJR-UHC vs AS4C512M16D4A-62BCN 比較
詳細並排比較 H5AN8G6NDJR-UHC 由 SK hynix 與 AS4C512M16D4A-62BCN 由 Alliance Memory. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Alliance Memory
AS4C512M16D4A-62BCN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4A-62BCN ✓ 啟用中規格比較
| 參數 | H5AN8G6NDJR-UHC | AS4C512M16D4A-62BCN |
|---|---|---|
| 品牌 | SK hynix | Alliance Memory |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| 組織 | 512M x 16 | 512M x 16 |
| Speed Grade | 3200 Mbps (PC4-25600) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Supply Voltage (VDDQ) | 1.2 V | — |
| Number of Terminals | 96 | — |
| 封裝 | FBGA-96 (13x7.5 mm) | 96-FBGA (7.5x13 mm) |
| Package Shape | RECTANGULAR | — |
| JESD-30 Code | R-PBGA-B96 | — |
| Maximum Operating Temperature | 85 °C | — |
| Minimum Operating Temperature | 0 °C | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| 無鹵素 | Yes | — |
| Additional Features | Auto/Self Refresh, Auto Precharge, Asynchronous Reset, Data Mask, Dynamic ODT, ZQ Calibration, CRC, Write Leveling | — |
| 記憶體容量 | — | 8 Gbit |
| 供應電壓 | — | 1.2 V |
| 資料速率 | — | 1600 MHz (3200 Mbps) |
| CAS 延遲 | — | 18 ns |
| 工作溫度 | — | 0°C to 95°C |
| 安裝類型 | — | Surface Mount |
| JEDEC Standard | — | Compliant |
| 介面 | — | POD (Pseudo Open Drain) |
| Refresh | — | Auto-refresh and self-refresh |
| On-Die Termination | — | Yes |
| RoHS 狀態 | — | Compliant |
| Packaging | — | Tray |