H5AN8G6NDJR-UHC vs AS4C512M16D4A-62BCN Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G6NDJR-UHC sa pamamagitan ng SK hynix at AS4C512M16D4A-62BCN sa pamamagitan ng Alliance Memory. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Alliance Memory
AS4C512M16D4A-62BCN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4A-62BCN ✓ NakahandaPagsanggunian na paghahambing
| Parametro | H5AN8G6NDJR-UHC | AS4C512M16D4A-62BCN |
|---|---|---|
| Brand | SK hynix | Alliance Memory |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasyon | 512M x 16 | 512M x 16 |
| Speed Grade | 3200 Mbps (PC4-25600) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Supply Voltage (VDDQ) | 1.2 V | — |
| Number of Terminals | 96 | — |
| Packhaging | FBGA-96 (13x7.5 mm) | 96-FBGA (7.5x13 mm) |
| Package Shape | RECTANGULAR | — |
| JESD-30 Code | R-PBGA-B96 | — |
| Maximum Operating Temperature | 85 °C | — |
| Minimum Operating Temperature | 0 °C | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Wala sa Halogen | Yes | — |
| Additional Features | Auto/Self Refresh, Auto Precharge, Asynchronous Reset, Data Mask, Dynamic ODT, ZQ Calibration, CRC, Write Leveling | — |
| Laki ng Memory | — | 8 Gbit |
| Volte ng Pagbibigay | — | 1.2 V |
| Rate ng Data | — | 1600 MHz (3200 Mbps) |
| Latensya ng CAS | — | 18 ns |
| Temperature na Operasyon | — | 0°C to 95°C |
| Uri ng Pagpapasok | — | Surface Mount |
| JEDEC Standard | — | Compliant |
| Interface | — | POD (Pseudo Open Drain) |
| Refresh | — | Auto-refresh and self-refresh |
| On-Die Termination | — | Yes |
| Tindminan RoHS | — | Compliant |
| Packaging | — | Tray |