IPB019N08N3GATMA1 vs IRFB3207ZPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB019N08N3GATMA1 sa pamamagitan ng Infineon at IRFB3207ZPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB019N08N3GATMA1 - 80V 180A 1.9mΩ OptiMOS 3 N-MOSFET | Infineon
IPB019N08N3GATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPB019N08N3GATMA1 | IRFB3207ZPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Series | OptiMOS 3 | HEXFET |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-to-Source Voltage (Vdss) | 80 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 180 A | — |
| Power Dissipation (Pd) @ Tc=25°C | 300 W | — |
| On-Resistance RDS(on) Max @ VGS=10V | 1.9 mΩ | — |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V | — |
| Drive Voltage (Rds On Max) | 6 V, 10 V | — |
| Total Gate Charge (Qg) @ VGS=10V | 206 nC | — |
| Input Capacitance (Ciss) | 14.2 nF | — |
| Output Capacitance (Coss) | 3.84 nF | — |
| Reverse Transfer Capacitance (Crss) | 3.84 nF | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C | — |
| Packhaging | PG-TO263-7 (D2PAK-6, surface mount) | TO-220AB (3-lead through-hole) |
| Uri ng Pagpapasok | Surface Mount | Through Hole |
| Tindminan RoHS | Compliant | — |
| Part Number | — | IRFB3207ZPBF |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Temperature ng Junction na Operasyon | — | -55 C to +175 C |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Level ng MSL | — | N/A (through-hole) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |