IPB019N08N3GATMA1 vs IRFB3207ZPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB019N08N3GATMA1 disebabkan oleh Infineon dan IRFB3207ZPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB019N08N3GATMA1 IRFB3207ZPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Series OptiMOS 3 HEXFET
FET Type N-Channel —
Technology MOSFET (Metal Oxide) N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Drain-to-Source Voltage (Vdss) 80 V —
Continuous Drain Current (Id) @ Tc=25°C 180 A —
Power Dissipation (Pd) @ Tc=25°C 300 W —
On-Resistance RDS(on) Max @ VGS=10V 1.9 mΩ —
Gate Threshold Voltage (Vgs(th)) 3.5 V —
Drive Voltage (Rds On Max) 6 V, 10 V —
Total Gate Charge (Qg) @ VGS=10V 206 nC —
Input Capacitance (Ciss) 14.2 nF —
Output Capacitance (Coss) 3.84 nF —
Reverse Transfer Capacitance (Crss) 3.84 nF —
Gambaran Suhu Operasi -55 °C to +175 °C —
Kemasan PG-TO263-7 (D2PAK-6, surface mount) TO-220AB (3-lead through-hole)
Jenis Pemasangan Surface Mount Through Hole
Status RoHS Compliant —
Part Number — IRFB3207ZPBF
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) at TC=25C — 120 A
Silicon-Limited Drain Current — 170 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V — 4.1 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
Suhu Hubungan Operasi — -55 C to +175 C
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
Aras MSL — N/A (through-hole)
Avalanche Rated — Yes (improved Z-variant ruggedness)

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