IPB107N20N3GATMA1 vs IPB200N25N3GATMA1 Comparison

Detailed side-by-side comparison of IPB107N20N3GATMA1 by Infineon and IPB200N25N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPB200N25N3GATMA1 IPB200N25N3GATMA1 - 250V 64A OptiMOS 3 N-Ch MOSFET | Infineon

IPB200N25N3GATMA1 - 250V 64A OptiMOS 3 N-Ch MOSFET | Infineon

IPB200N25N3GATMA1 βœ“ Active

Specification Comparison

Parameter IPB107N20N3GATMA1 IPB200N25N3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.18 $1.65
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 β€”
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 200 V β€”
Continuous Drain Current (ID) at Tc 88 A β€”
Maximum Power Dissipation (Pd) at Tc 300 W β€”
On-Resistance RDS(on) at VGS=10V 9.6 milliohm (typical, per third-party listing) β€”
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/range] β€”
Operating Temperature Range [DATA_NEEDED: Tj max and operating range] -55C to +175C
Package PG-TO263-3 (D2PAK) PG-TO263-3 (D2PAK)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Drain, Source, Gate) + Tab 3 (2+tab)
RoHS Status Compliant Compliant
Technology OptiMOS 3 trench MOSFET OptiMOS 3 (Trench)
Part Family β€” OptiMOS 3
Drain-Source Voltage (V_DS) β€” 250 V
Continuous Drain Current (I_D) at T_C β€” 64 A
Power Dissipation (P_D) at T_C β€” 300 W
R_DS(on) max at V_GS=10V β€” 20 mOhm
Gate Threshold Voltage (V_GS(th)) β€” [DATA_NEEDED: V_GS(th) typical/max]
Gate Charge (Q_g) β€” [DATA_NEEDED: Q_g typical]
Halogen-Free β€” Yes (per Infineon OptiMOS family datasheet)
MSL Level β€” 1 (per JEDEC J-STD-020)

Datasheets & Resources

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