IPB107N20N3GATMA1 vs IPB200N25N3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB107N20N3GATMA1 disebabkan oleh Infineon dan IPB200N25N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPB107N20N3GATMA1 - 200V 88A OptiMOS 3 N-Channel MOSFET | Infineon
IPB107N20N3GATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPB107N20N3GATMA1 | IPB200N25N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | — |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at Tc | 88 A | — |
| Maximum Power Dissipation (Pd) at Tc | 300 W | — |
| On-Resistance RDS(on) at VGS=10V | 9.6 milliohm (typical, per third-party listing) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: Tj max and operating range] | -55C to +175C |
| Kemasan | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (Drain, Source, Gate) + Tab | 3 (2+tab) |
| Status RoHS | Compliant | Compliant |
| Technology | OptiMOS 3 trench MOSFET | OptiMOS 3 (Trench) |
| Part Family | — | OptiMOS 3 |
| Drain-Source Voltage (V_DS) | — | 250 V |
| Continuous Drain Current (I_D) at T_C | — | 64 A |
| Power Dissipation (P_D) at T_C | — | 300 W |
| R_DS(on) max at V_GS=10V | — | 20 mOhm |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/max] |
| Gate Charge (Q_g) | — | [DATA_NEEDED: Q_g typical] |
| Boson Bebas | — | Yes (per Infineon OptiMOS family datasheet) |
| Aras MSL | — | 1 (per JEDEC J-STD-020) |