IPB120P04P4L03ATMA2 vs IRF4905SPBF Comparison

Detailed side-by-side comparison of IPB120P04P4L03ATMA2 by Infineon and IRF4905SPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPB120P04P4L03ATMA2 IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon

IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon

IPB120P04P4L03ATMA2 βœ“ Active

Specification Comparison

Parameter IPB120P04P4L03ATMA2 IRF4905SPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.74 $1.18
Transistor Polarity P-Channel β€”
Drain-Source Voltage (VDS) 40 V -55 V
Continuous Drain Current (ID, Tc=25C) 120 A -42 A
Power Dissipation (PD, Tc=25C) 136 W 170 W
On-Resistance (RDS(on)) 3.1 mΞ© (typ, per Infineon summary) β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] [DATA_NEEDED: VGS max, typical +/-20V]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] -2.0 V to -4.0 V
Operating Junction Temperature -55C to +175C -55 C to +150 C
Package PG-TO263-3-2 (D2PAK) D2PAK (TO-263) surface mount
Mounting Type Surface Mount Surface Mount
Technology Family OptiMOS-P2 β€”
Configuration Single P-Channel MOSFET β€”
Pin Count 3 (Gate, Drain, Source) β€”
MSL Level [DATA_NEEDED: MSL level] β€”
RoHS Status Compliant (per Infineon product page) Compliant (PBF suffix indicates Pb-free)
Polarity β€” P-Channel
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on) max) β€” 20 mOhm @ VGS = -10V
Thermal Resistance, Junction-to-Case (RthJC) β€” [DATA_NEEDED: RthJC, typical 0.6 C/W]
Technology β€” HEXFET, planar cell
Total Gate Charge (Qg) β€” 120 nC (typical per Mouser listing)
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss]
Qualification β€” JEDEC standard

Datasheets & Resources

Browse All Products Create BOM Request Quote