IPB120P04P4L03ATMA2 vs IRF4905SPBF 比較

詳細並排比較 IPB120P04P4L03ATMA2 由 Infineon 與 IRF4905SPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPB120P04P4L03ATMA2 IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon

IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon

IPB120P04P4L03ATMA2 ✓ 啟用中

規格比較

參數 IPB120P04P4L03ATMA2 IRF4905SPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Transistor Polarity P-Channel —
Drain-Source Voltage (VDS) 40 V -55 V
Continuous Drain Current (ID, Tc=25C) 120 A -42 A
Power Dissipation (PD, Tc=25C) 136 W 170 W
On-Resistance (RDS(on)) 3.1 mΩ (typ, per Infineon summary) —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] [DATA_NEEDED: VGS max, typical +/-20V]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] -2.0 V to -4.0 V
工作接面溫度 -55C to +175C -55 C to +150 C
封裝 PG-TO263-3-2 (D2PAK) D2PAK (TO-263) surface mount
安裝類型 Surface Mount Surface Mount
Technology Family OptiMOS-P2 —
Configuration Single P-Channel MOSFET —
腳位數 3 (Gate, Drain, Source) —
MSL 等級 [DATA_NEEDED: MSL level] —
RoHS 狀態 Compliant (per Infineon product page) Compliant (PBF suffix indicates Pb-free)
Polarity — P-Channel
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on) max) — 20 mOhm @ VGS = -10V
Thermal Resistance, Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC, typical 0.6 C/W]
Technology — HEXFET, planar cell
Total Gate Charge (Qg) — 120 nC (typical per Mouser listing)
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Qualification — JEDEC standard

資料表與資源

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