IPB120P04P4L03ATMA2 vs IRF4905SPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB120P04P4L03ATMA2 disebabkan oleh Infineon dan IRF4905SPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB120P04P4L03ATMA2 IRF4905SPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Transistor Polarity P-Channel —
Drain-Source Voltage (VDS) 40 V -55 V
Continuous Drain Current (ID, Tc=25C) 120 A -42 A
Power Dissipation (PD, Tc=25C) 136 W 170 W
On-Resistance (RDS(on)) 3.1 mΩ (typ, per Infineon summary) —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] [DATA_NEEDED: VGS max, typical +/-20V]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] -2.0 V to -4.0 V
Suhu Hubungan Operasi -55C to +175C -55 C to +150 C
Kemasan PG-TO263-3-2 (D2PAK) D2PAK (TO-263) surface mount
Jenis Pemasangan Surface Mount Surface Mount
Technology Family OptiMOS-P2 —
Configuration Single P-Channel MOSFET —
Kiraan Pin 3 (Gate, Drain, Source) —
Aras MSL [DATA_NEEDED: MSL level] —
Status RoHS Compliant (per Infineon product page) Compliant (PBF suffix indicates Pb-free)
Polarity — P-Channel
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on) max) — 20 mOhm @ VGS = -10V
Thermal Resistance, Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC, typical 0.6 C/W]
Technology — HEXFET, planar cell
Total Gate Charge (Qg) — 120 nC (typical per Mouser listing)
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Qualification — JEDEC standard

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