IPB120P04P4L03ATMA2 vs IRF4905SPBF Perbandingan

Perbandingan bersamaan detil IPB120P04P4L03ATMA2 dari Infineon dan IRF4905SPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB120P04P4L03ATMA2 IRF4905SPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Transistor Polarity P-Channel —
Drain-Source Voltage (VDS) 40 V -55 V
Continuous Drain Current (ID, Tc=25C) 120 A -42 A
Power Dissipation (PD, Tc=25C) 136 W 170 W
On-Resistance (RDS(on)) 3.1 mΩ (typ, per Infineon summary) —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] [DATA_NEEDED: VGS max, typical +/-20V]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] -2.0 V to -4.0 V
Suhu Hubung Kerja -55C to +175C -55 C to +150 C
Paket PG-TO263-3-2 (D2PAK) D2PAK (TO-263) surface mount
Tipe Mounting Surface Mount Surface Mount
Technology Family OptiMOS-P2 —
Configuration Single P-Channel MOSFET —
Jumlah Pin 3 (Gate, Drain, Source) —
Level MSL [DATA_NEEDED: MSL level] —
Status RoHS Compliant (per Infineon product page) Compliant (PBF suffix indicates Pb-free)
Polarity — P-Channel
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on) max) — 20 mOhm @ VGS = -10V
Thermal Resistance, Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC, typical 0.6 C/W]
Technology — HEXFET, planar cell
Total Gate Charge (Qg) — 120 nC (typical per Mouser listing)
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Qualification — JEDEC standard

Spek dan Sumber

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