IPB60R040CFD7ATMA1 vs IPB60R125C6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB60R040CFD7ATMA1 disebabkan oleh Infineon dan IPB60R125C6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB60R040CFD7ATMA1 IPB60R125C6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Status Stok In Stock —
Harga Unit (USD) $5.19 —
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS CFD7 —
Technology Superjunction (SJ) N-Channel MOSFET MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc=25°C) 50 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V 40 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
Pembuangan Kuasa (TC=25°C) 227 W —
Gambaran Suhu Operasi -55°C to +150°C —
Kemasan PG-TO263-3-2 (D2PAK) —
Jenis Pemasangan Surface Mount Surface Mount
Integrated Body Diode Yes - ultra-fast CoolMOS CFD7 diode —
Aras MSL 1 —
Status RoHS Compliant Compliant
Lead-Free Yes —
Target Applications Soft-switching topologies (ZVS phase-shift full-bridge, LLC) —
Series — CoolMOS™ C6
Part Status — Active
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25°C — 30 A
Continuous Drain Current (ID) at TC=100°C — [DATA_NEEDED: ID at TC=100°C]
Drain-Source On-Resistance (RDS(on)) max at VGS=10V — 125 mΩ
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Gate Charge (Qg, typical) — [DATA_NEEDED: Qg typical value]
Power Dissipation (PD) at TC=25°C — 219 W
Suhu Hubungan Operasi — -55°C to +150°C
Kemasan / Case — PG-TO263-3 (D2PAK, surface mount)
Supplier Device Package — PG-TO263-3
Lead-Free Status — Yes

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