IPB60R040CFD7ATMA1 vs IPB60R125C6ATMA1 比較

詳細並排比較 IPB60R040CFD7ATMA1 由 Infineon 與 IPB60R125C6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPB60R040CFD7ATMA1 IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 ✓ 啟用中

規格比較

參數 IPB60R040CFD7ATMA1 IPB60R125C6ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
庫存狀態 In Stock —
單價 (USD) $5.19 —
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS CFD7 —
Technology Superjunction (SJ) N-Channel MOSFET MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc=25°C) 50 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V 40 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
功率耗散 (TC=25°C) 227 W —
工作溫度範圍 -55°C to +150°C —
封裝 PG-TO263-3-2 (D2PAK) —
安裝類型 Surface Mount Surface Mount
Integrated Body Diode Yes - ultra-fast CoolMOS CFD7 diode —
MSL 等級 1 —
RoHS 狀態 Compliant Compliant
Lead-Free Yes —
Target Applications Soft-switching topologies (ZVS phase-shift full-bridge, LLC) —
Series — CoolMOS™ C6
Part Status — Active
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25°C — 30 A
Continuous Drain Current (ID) at TC=100°C — [DATA_NEEDED: ID at TC=100°C]
Drain-Source On-Resistance (RDS(on)) max at VGS=10V — 125 mΩ
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Gate Charge (Qg, typical) — [DATA_NEEDED: Qg typical value]
Power Dissipation (PD) at TC=25°C — 219 W
工作接面溫度 — -55°C to +150°C
封裝 / 外殼 — PG-TO263-3 (D2PAK, surface mount)
Supplier Device Package — PG-TO263-3
Lead-Free Status — Yes

資料表與資源

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