IPB60R040CFD7ATMA1 vs IPB60R125C6ATMA1 Perbandingan

Perbandingan bersamaan detil IPB60R040CFD7ATMA1 dari Infineon dan IPB60R125C6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB60R040CFD7ATMA1 IPB60R125C6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS CFD7 —
Technology Superjunction (SJ) N-Channel MOSFET MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc=25°C) 50 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V 40 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
Dissipasi Listrik (TC=25°C) 227 W —
Rentang Suhu Kerja -55°C to +150°C —
Paket PG-TO263-3-2 (D2PAK) —
Tipe Mounting Surface Mount Surface Mount
Integrated Body Diode Yes - ultra-fast CoolMOS CFD7 diode —
Level MSL 1 —
Status RoHS Compliant Compliant
Lead-Free Yes —
Target Applications Soft-switching topologies (ZVS phase-shift full-bridge, LLC) —
Series — CoolMOS™ C6
Part Status — Active
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25°C — 30 A
Continuous Drain Current (ID) at TC=100°C — [DATA_NEEDED: ID at TC=100°C]
Drain-Source On-Resistance (RDS(on)) max at VGS=10V — 125 mΩ
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Gate Charge (Qg, typical) — [DATA_NEEDED: Qg typical value]
Power Dissipation (PD) at TC=25°C — 219 W
Suhu Hubung Kerja — -55°C to +150°C
Paket / Case — PG-TO263-3 (D2PAK, surface mount)
Supplier Device Package — PG-TO263-3
Lead-Free Status — Yes

Spek dan Sumber

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