IPD35N10S3L26ATMA2 vs IPD30N10S3L34ATMA1 Comparison
Detailed side-by-side comparison of IPD35N10S3L26ATMA2 by Infineon and IPD30N10S3L34ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
IPD35N10S3L26ATMA2 β ActiveInfineon
IPD30N10S3L34ATMA1 - 100V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N10S3L34ATMA1 β ActiveSpecification Comparison
| Parameter | IPD35N10S3L26ATMA2 | IPD30N10S3L34ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T | OptiMOS-T2 |
| Transistor Type | N-Channel MOSFET | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc) | 35 A | β |
| On-Resistance R<sub>DS(on)</sub> max | 24 mOhm | β |
| Power Dissipation (Ptot, Tc) | 71 W | β |
| Gate Threshold V<sub>GS(th)</sub> | [DATA_NEEDED: gate threshold typical/range] | β |
| Operating Temperature Range | [DATA_NEEDED: Tj min/max] | β |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK-2 / SC-63) |
| Pin Count | 3 (Drain, Source, Gate + tab) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Technology | Trench MOSFET (OptiMOS-T) | β |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (JEDEC J-STD-020, 260Β°C peak reflow) |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 30 A |
| Pulsed Drain Current (IDM) | β | 180 A |
| Power Dissipation (PD, Tc=25Β°C) | β | 57 W |
| Drain-Source On-Resistance (RDS(on) max) | β | 31 mΞ© @ VGS=10 V |
| Gate-Source Threshold Voltage (VGS(th) typ) | β | 1.7 V (range 1.0 V to 2.5 V) |
| Total Gate Charge (Qg typ) | β | 23 nC |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| RoHS / REACH | β | Compliant |
| Lead-Free / Halogen-Free | β | Yes / Yes |
| Avalanche Rated | β | 100% Avalanche tested |