IPD35N10S3L26ATMA2 vs IPD30N10S3L34ATMA1 Comparison

Detailed side-by-side comparison of IPD35N10S3L26ATMA2 by Infineon and IPD30N10S3L34ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD35N10S3L26ATMA2 IPD30N10S3L34ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T OptiMOS-T2
Transistor Type N-Channel MOSFET N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 35 A —
On-Resistance R<sub>DS(on)</sub> max 24 mOhm —
Power Dissipation (Ptot, Tc) 71 W —
Gate Threshold V<sub>GS(th)</sub> [DATA_NEEDED: gate threshold typical/range] —
Operating Temperature Range [DATA_NEEDED: Tj min/max] —
Package PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK-2 / SC-63)
Pin Count 3 (Drain, Source, Gate + tab) —
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Technology Trench MOSFET (OptiMOS-T) —
RoHS Status Compliant —
Lead-Free Yes —
MSL Level [DATA_NEEDED: MSL rating] 1 (JEDEC J-STD-020, 260°C peak reflow)
Continuous Drain Current (ID, Tc=25°C) — 30 A
Pulsed Drain Current (IDM) — 180 A
Power Dissipation (PD, Tc=25°C) — 57 W
Drain-Source On-Resistance (RDS(on) max) — 31 mΩ @ VGS=10 V
Gate-Source Threshold Voltage (VGS(th) typ) — 1.7 V (range 1.0 V to 2.5 V)
Total Gate Charge (Qg typ) — 23 nC
Operating Junction Temperature — -55°C to +175°C
RoHS / REACH — Compliant
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — 100% Avalanche tested

Datasheets & Resources

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