IPD35N10S3L26ATMA2 vs IPD30N10S3L34ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD35N10S3L26ATMA2 disebabkan oleh Infineon dan IPD30N10S3L34ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD35N10S3L26ATMA2 IPD30N10S3L34ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T OptiMOS-T2
Jenis Transistor N-Channel MOSFET N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 35 A —
On-Resistance R<sub>DS(on)</sub> max 24 mOhm —
Power Dissipation (Ptot, Tc) 71 W —
Gate Threshold V<sub>GS(th)</sub> [DATA_NEEDED: gate threshold typical/range] —
Gambaran Suhu Operasi [DATA_NEEDED: Tj min/max] —
Kemasan PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK-2 / SC-63)
Kiraan Pin 3 (Drain, Source, Gate + tab) —
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Technology Trench MOSFET (OptiMOS-T) —
Status RoHS Compliant —
Lead-Free Yes —
Aras MSL [DATA_NEEDED: MSL rating] 1 (JEDEC J-STD-020, 260°C peak reflow)
Continuous Drain Current (ID, Tc=25°C) — 30 A
Pulsed Drain Current (IDM) — 180 A
Power Dissipation (PD, Tc=25°C) — 57 W
Drain-Source On-Resistance (RDS(on) max) — 31 mΩ @ VGS=10 V
Gate-Source Threshold Voltage (VGS(th) typ) — 1.7 V (range 1.0 V to 2.5 V)
Total Gate Charge (Qg typ) — 23 nC
Suhu Hubungan Operasi — -55°C to +175°C
RoHS / REACH — Compliant
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — 100% Avalanche tested

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