IPD35N10S3L26ATMA2 vs IPD30N10S3L34ATMA1 Perbandingan

Perbandingan bersamaan detil IPD35N10S3L26ATMA2 dari Infineon dan IPD30N10S3L34ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD35N10S3L26ATMA2 IPD30N10S3L34ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T OptiMOS-T2
Tipe Transistor N-Channel MOSFET N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 35 A —
On-Resistance R<sub>DS(on)</sub> max 24 mOhm —
Power Dissipation (Ptot, Tc) 71 W —
Gate Threshold V<sub>GS(th)</sub> [DATA_NEEDED: gate threshold typical/range] —
Rentang Suhu Kerja [DATA_NEEDED: Tj min/max] —
Paket PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK-2 / SC-63)
Jumlah Pin 3 (Drain, Source, Gate + tab) —
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Technology Trench MOSFET (OptiMOS-T) —
Status RoHS Compliant —
Lead-Free Yes —
Level MSL [DATA_NEEDED: MSL rating] 1 (JEDEC J-STD-020, 260°C peak reflow)
Continuous Drain Current (ID, Tc=25°C) — 30 A
Pulsed Drain Current (IDM) — 180 A
Power Dissipation (PD, Tc=25°C) — 57 W
Drain-Source On-Resistance (RDS(on) max) — 31 mΩ @ VGS=10 V
Gate-Source Threshold Voltage (VGS(th) typ) — 1.7 V (range 1.0 V to 2.5 V)
Total Gate Charge (Qg typ) — 23 nC
Suhu Hubung Kerja — -55°C to +175°C
RoHS / REACH — Compliant
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — 100% Avalanche tested

Spek dan Sumber

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