IPD35N10S3L26ATMA2 vs IPD70N10S312ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD35N10S3L26ATMA2 disebabkan oleh Infineon dan IPD70N10S312ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD35N10S3L26ATMA2 IPD70N10S312ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Product Family OptiMOS-T OptiMOS-T Power-Transistor
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 35 A 70 A
On-Resistance R<sub>DS(on)</sub> max 24 mOhm —
Power Dissipation (Ptot, Tc) 71 W —
Gate Threshold V<sub>GS(th)</sub> [DATA_NEEDED: gate threshold typical/range] —
Gambaran Suhu Operasi [DATA_NEEDED: Tj min/max] —
Kemasan PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK, 2 Leads + Tab)
Kiraan Pin 3 (Drain, Source, Gate + tab) —
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101
Technology Trench MOSFET (OptiMOS-T) —
Status RoHS Compliant —
Lead-Free Yes —
Aras MSL [DATA_NEEDED: MSL rating] MSL1 (up to 260 °C peak reflow)
Part Number — IPD70N10S312ATMA1
FET Type — N-Channel, Enhancement Mode
Pulsed Drain Current (IDM) — 180 A
Power Dissipation (PD, Tc) — 125 W
On-State Resistance (RDS(on)) — 11.1 mΩ @ 70 A, 10 V VGS
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Input Capacitance (Ciss) — 4355 pF @ 25 V
Total Gate Charge (Qg) — 65 nC @ 10 V
Operating Temperature (TJ) — -55 °C to +175 °C
Avalanche Tested — 100 % (per datasheet)
RoHS Compliance — Green product, RoHS compliant

Laporan Datasheet & Sumber

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