IPD35N10S3L26ATMA2 vs IPD70N10S312ATMA1 Perbandingan

Perbandingan bersamaan detil IPD35N10S3L26ATMA2 dari Infineon dan IPD70N10S312ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD35N10S3L26ATMA2 IPD70N10S312ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Product Family OptiMOS-T OptiMOS-T Power-Transistor
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 35 A 70 A
On-Resistance R<sub>DS(on)</sub> max 24 mOhm —
Power Dissipation (Ptot, Tc) 71 W —
Gate Threshold V<sub>GS(th)</sub> [DATA_NEEDED: gate threshold typical/range] —
Rentang Suhu Kerja [DATA_NEEDED: Tj min/max] —
Paket PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK, 2 Leads + Tab)
Jumlah Pin 3 (Drain, Source, Gate + tab) —
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101
Technology Trench MOSFET (OptiMOS-T) —
Status RoHS Compliant —
Lead-Free Yes —
Level MSL [DATA_NEEDED: MSL rating] MSL1 (up to 260 °C peak reflow)
Part Number — IPD70N10S312ATMA1
FET Type — N-Channel, Enhancement Mode
Pulsed Drain Current (IDM) — 180 A
Power Dissipation (PD, Tc) — 125 W
On-State Resistance (RDS(on)) — 11.1 mΩ @ 70 A, 10 V VGS
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Input Capacitance (Ciss) — 4355 pF @ 25 V
Total Gate Charge (Qg) — 65 nC @ 10 V
Operating Temperature (TJ) — -55 °C to +175 °C
Avalanche Tested — 100 % (per datasheet)
RoHS Compliance — Green product, RoHS compliant

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