IPD35N10S3L26ATMA2 vs IPD70N10S312ATMA1 比較
詳細並排比較 IPD35N10S3L26ATMA2 由 Infineon 與 IPD70N10S312ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD35N10S3L26ATMA2 | IPD70N10S312ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Product Family | OptiMOS-T | OptiMOS-T Power-Transistor |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc) | 35 A | 70 A |
| On-Resistance R<sub>DS(on)</sub> max | 24 mOhm | — |
| Power Dissipation (Ptot, Tc) | 71 W | — |
| Gate Threshold V<sub>GS(th)</sub> | [DATA_NEEDED: gate threshold typical/range] | — |
| 工作溫度範圍 | [DATA_NEEDED: Tj min/max] | — |
| 封裝 | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK, 2 Leads + Tab) |
| 腳位數 | 3 (Drain, Source, Gate + tab) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Technology | Trench MOSFET (OptiMOS-T) | — |
| RoHS 狀態 | Compliant | — |
| Lead-Free | Yes | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | MSL1 (up to 260 °C peak reflow) |
| Part Number | — | IPD70N10S312ATMA1 |
| FET Type | — | N-Channel, Enhancement Mode |
| Pulsed Drain Current (IDM) | — | 180 A |
| Power Dissipation (PD, Tc) | — | 125 W |
| On-State Resistance (RDS(on)) | — | 11.1 mΩ @ 70 A, 10 V VGS |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Input Capacitance (Ciss) | — | 4355 pF @ 25 V |
| Total Gate Charge (Qg) | — | 65 nC @ 10 V |
| Operating Temperature (TJ) | — | -55 °C to +175 °C |
| Avalanche Tested | — | 100 % (per datasheet) |
| RoHS Compliance | — | Green product, RoHS compliant |