IPD50N06S409ATMA2 vs IPD038N06N3GATMA1 Perbandingan
Perbandingan bersamaan detil IPD50N06S409ATMA2 dari Infineon dan IPD038N06N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD50N06S409ATMA2 | IPD038N06N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | N-Channel MOSFET (OptiMOS) | OptiMOS trench MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at Tc | 50 A | 90 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | 9 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | 4 V (typ) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (Pd) at Tc | 71 W | — |
| Suhu Hubung Kerja | -55 °C to +175 °C | — |
| Paket | PG-TO252-3-11 (DPAK) | PG-TO252-3 (DPAK) |
| Jumlah Pin | 3 (2 + Tab) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | [DATA_NEEDED] | — |
| FET Type | — | N-Channel MOSFET |
| Series | — | OptiMOS 60V |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | — | ±20 V |
| On-Resistance (RDS(on)) at VGS=10V | — | 3.8 mΩ |
| Total Power Dissipation (PD) at Tc | — | 188 W |
| Rentang Suhu Kerja | — | [DATA_NEEDED: operating temperature range] |
| Level MSL | — | 1 |
| Bebas Halogen | — | Yes |
| Lead-Free | — | Yes |
| Polarity | — | N-Channel |