IPD50N06S409ATMA2 vs IPD053N06NATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD50N06S409ATMA2 disebabkan oleh Infineon dan IPD053N06NATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD50N06S409ATMA2 IPD053N06NATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology N-Channel MOSFET (OptiMOS) OptiMOS 5 trench MOSFET
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at Tc 50 A —
On-Resistance R<sub>DS(on)</sub> max at VGS=10V 9 mΩ —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (Pd) at Tc 71 W —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan PG-TO252-3-11 (DPAK) PG-TO252-3 (DPAK-2), Surface Mount
Kiraan Pin 3 (2 + Tab) —
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
Status RoHS Compliant Compliant
Lead-Free / Halogen-Free [DATA_NEEDED] —
Manufacturer — Infineon Technologies
Product Series — OptiMOS 5 60V
Transistor Polarity — N-Channel
Gate-Source Voltage (VGS) — +/- 20 V
Continuous Drain Current (ID, Tc) — 45 A
Continuous Drain Current (ID, Ta) — 18 A
On-State Resistance (RDS(on), max) — 5.3 mOhm @ VGS=10V
Power Dissipation (Tc) — 83 W
Power Dissipation (Ta) — 3 W
Gambaran Suhu Operasi — -55C to +175C (Tj) [DATA_NEEDED: precise operating range min/max from datasheet]

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