IPD80R1K4P7ATMA1 - 800V CoolMOS P7 MOSFET | Infineon
MPN: IPD80R1K4P7ATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.05 | $1.05 |
| 10 | $0.95 | $9.50 |
| 100 | $0.84 | $84.00 |
| 500 | $0.72 | $360.00 |
| 1,000 | $0.62 | $620.00 |
Drop-in alternatives for IPD80R1K4P7ATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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IPD80R1K2P7ATMA1
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β Drop-Inβ In Stock
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View Datasheet βIPD80R1K4P7ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | CoolMOS P7 |
| Technology | N-Channel Superjunction |
| Drain-Source Voltage (VDS) | 800 V |
| Continuous Drain Current (ID) at Tc=25C | 4 A |
| On-Resistance (RDS(on)) typ/max | 1.2 ohm typ / 1.4 ohm max |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typ) |
| Power Dissipation (Ptot) | 32 W |
| Operating Junction Temperature | -55C to +150C |
| Package | PG-TO252-2 (DPAK) |
| Mounting Type | Surface Mount |
| Pin Count | 3 (Gate, Drain/Tab, Source) |
| RoHS Status | Compliant |
| REACH Status | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | Yes |
| Body Diode | Integrated, fast recovery |
IPD80R1K4P7ATMA1 Pin Configuration
| Pin 1 | Gate β Gate drive input; standard VGS(th) ~3.5V, fully enhanced at VGS=10V |
| Pin 2 | Source β Source terminal; tied to power ground in TO252 layout |
| Pin 3 | Drain β Drain terminal / thermal tab; primary power and PCB heatsink connection |
Safe Operating Area
Typical Applications
IPD80R1K4P7ATMA1 is suitable for 6 applications: Notebook & Phone Adapter (Flyback), Auxiliary Power Supply (Industrial), LED Lighting Driver, TV / Set-Top Box SMPS, Battery Charger Front-End, Solar Micro-Inverter (Low-Power Stage).
Notebook & Phone Adapter (Flyback)
The IPD80R1K4P7ATMA1 is purpose-built for the primary-side switch in universal-input AC/DC flyback adapters from 5W to 45W. Its 800V VDS rating provides 30%+ margin above the rectified 230 VAC peak (~325 VDC), allowing safe operation under worst-case line surges and transformer leakage spikes. The 1.4 ohm RDS(on) keeps conduction loss manageable at the typical 1-2A primary RMS current, while the fast body diode supports CCM operation in higher-power adapters. At 65 kHz typical switching frequency the CoolMOS P7 figure-of-merit delivers efficiency above 88% in a 30W flyback. This part pairs naturally with Infineon ICE2QR0680Z / XDPS2201 controllers.
Recommended
Auxiliary Power Supply (Industrial)
In white goods, HVAC controllers, and industrial PLCs the IPD80R1K4P7ATMA1 serves as the primary switch in a low-power flyback or buck-derived auxiliary supply. Industrial systems require universal 85-305 VAC input support, where 800V breakdown provides margin across the entire input range. The DPAK package handles up to 32W dissipation with copper-pour heatsinking and is compatible with automated SMT lines. The device's wide -55C to +150C operating junction range suits harsh industrial environments, and the integrated gate ESD clamp simplifies transient protection design.
Recommended
LED Lighting Driver
The IPD80R1K4P7ATMA1 is widely deployed in commercial and residential LED driver front-end PFC and flyback stages from 10W to 50W. Its 800V rating supports universal-input PFC boost converters operating from rectified 305 VAC. The CoolMOS P7's low Eoss reduces turn-on loss in hard-switched PFC topologies, and the fast body diode enables boundary-conduction-mode PFC with minimized dead time. At 100-150 kHz switching frequencies common in LED drivers, switching losses dominate and the part's low Qg provides efficiency headroom for Class C harmonic compliance with passive valley-fill circuits.
Recommended
TV / Set-Top Box SMPS
In LCD TV main power supplies and set-top box adapters the IPD80R1K4P7ATMA1 functions as the primary-side MOSFET in quasi-resonant or LLC converters up to 150W. Its 800V rating covers 230 VAC universal-input rails, and the optimized body diode enables continuous-conduction-mode operation without external clamping. The DPAK footprint allows direct PCB integration with copper-pour heatsink, fitting compact TV power-supply form factors. The CoolMOS P7 efficiency advantage versus older P6 series translates to ~0.5% efficiency gain at full load, reducing heatsink requirements.
Recommended
Battery Charger Front-End
Cordless tool, e-bike, and small EV battery chargers in the 30-100W range use the IPD80R1K4P7ATMA1 as the primary-side switch in a power-factor-corrected flyback or interleaved PFC topology. The 800V rating provides safety margin for 230 VAC input chargers and supports continuous operation at high ambient temperatures typical of enclosed charger housings. The 4A continuous drain current handles short-circuit protection events during charge-cable faults, and the integrated avalanche rating absorbs the energy without external TVS clamp circuitry.
Recommended
Solar Micro-Inverter (Low-Power Stage)
In sub-300W grid-tied micro-inverters the IPD80R1K4P7ATMA1 serves as the primary-side switch in the DC-DC boost or flyback stage preceding the unfolding inverter. Its 800V VDS comfortably accommodates DC-bus voltages up to 450V from PV strings, and the CoolMOS P7 low gate charge Qg reduces driver losses. The fast body diode enables CCM operation at 50-100 kHz switching frequencies. Combined with an Infineon EicePath driver and digital MPPT controller, the part achieves CEC-weighted efficiencies above 95% in optimized designs.
Recommended
Recommended Products Summary
Engineering reference data for IPD80R1K4P7ATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD80R1K2P7ATMA1 | IPD80R900P7ATMA1 | IPD80R2K4P7ATMA1 | IPN80R1K2P7ATMA1 | IPN95R3K7P7ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO252-2 (DPAK) | PG-TO252-2 (DPAK) - same | PG-TO252-2 (DPAK) - same | PG-TO252-2 (DPAK) - same | PG-TO252-2 (DPAK) - same | PG-TO252-2 (DPAK) - same |
| Drain-Source Voltage (VDS) | 800 V | 800 V | 800 V | 800 V | 800 V | 950 V |
| On-Resistance RDS(on) max | 1.4 ohm | 1.2 ohm (-14%) | 0.9 ohm (-36%) | 2.4 ohm (+71%) | 1.2 ohm (-14%) | 3.7 ohm (+164%) |
| Continuous Drain Current (ID) | 4 A | 4 A | [DATA_NEEDED] | [DATA_NEEDED] | 4 A | [DATA_NEEDED] |
| Power Dissipation (Ptot) | 32 W | 32 W | 32 W | 32 W | 32 W | 32 W |
| Technology Family | CoolMOS P7 | CoolMOS P7 | CoolMOS P7 | CoolMOS P7 | CoolMOS P7 | CoolMOS P7 |
| Grade | Industrial | Industrial | Industrial | Industrial | Industrial | Industrial |
Key Differentiators
- CoolMOS P7 superjunction technology - lower switching losses vs older P6 series (vs Older CoolMOS P6 family parts in DPAK)
- 800V VDS provides 30%+ margin over 600V parts in 230 VAC designs (vs 600V-class MOSFETs in same DPAK footprint)
- Industrial-grade qualification with 32W power dissipation in DPAK (vs Consumer-grade 800V MOSFETs)
Design Notes
At continuous 4A drain current and Tc=25C the part is rated for 32W dissipation, but in practice the DPAK package requires copper-pour heatsinking. Estimated: on a 1 oz copper JEDEC 1s0p test board with ~2 sq.in. drain tab copper area, theta_JA is approximately 62 C/W. At 4W dissipation (typical flyback SMPS), the junction temperature rise is ~62C above ambient, giving 87C junction at 25C ambient - within the 150C rating. For higher dissipation, increase copper area or add forced-air cooling. The drain tab is electrically hot, so the heatsink must be isolated or the tab must be tied to PCB copper that is also at drain potential.
Route the gate drive trace away from the drain tab copper pour and use a tight gate-to-source resistor (10-100 ohm) close to the IC to suppress parasitic oscillations. The Source pin (pin 2) carries the high di/dt switching current - use a Kelvin connection if possible (separate source sense trace from the power source trace) to avoid feedback through the package source inductance, which would otherwise degrade switching speed and increase losses.
Do not exceed the 800V VDS rating under any transient - in flyback designs the leakage inductance spike can reach 30-50% of the input bus voltage above the reflected output voltage. Always include an RCD snubber or active clamp sized to keep the worst-case spike below 640V (80% of VDS max) for design margin. Also avoid body-diode reverse recovery stress in hard-switched topologies by either limiting duty cycle or using zero-voltage-switching (ZVS) where possible.
Place the gate driver within 5mm of the gate pin to minimize parasitic inductance. Use a wide, short loop for the power ground return (Source to controller GND). A 1 nF ceramic bypass capacitor between VCC and GND of the gate driver, placed within 3mm of the driver IC, suppresses the gate-drive loop ringing that otherwise couples into the control loop. Keep the snubber return trace short and direct to the Source pin to prevent snubber energy from circulating through the source inductance.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - use IPD80R1K4P7-IPA or higher-grade variants for automotive. MSL Level 1 per JEDEC J-STD-020.
