IPG20N04S408ATMA1 vs IPG20N06S2L65ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG20N04S408ATMA1 disebabkan oleh Infineon dan IPG20N06S2L65ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPG20N04S408ATMA1 | IPG20N06S2L65ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | Dual N-Channel | Dual N-Channel, Logic Level |
| Technology | OptiMOS (trench MOSFET) | OptiMOS-T2 (Planar Trench 55V) |
| Drain-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D, per channel) | 20 A at 25 degC case | — |
| R_DS(on) max @ V_GS=10V | 7.6 mOhm | — |
| Maximum Power Dissipation (P_D) | 65 W | — |
| Suhu Hubungan Operasi | -55 degC to +175 degC | — |
| Kemasan | PG-TDSON-8-4 (SuperSO8 dual) | PG-TDSON-8-4 (TDSON-8 EP) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | MSL1 (260 degC peak reflow) | MSL1 (260°C peak reflow) |
| AEC-Q101 Qualified | Yes | — |
| Status RoHS | Compliant (Green Product) | — |
| Avalanche Rated | 100 percent tested | — |
| Channel Count | 2 (independent) | — |
| Operating Mode | Enhancement mode, Normal Level | — |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) | — | 20 A per channel |
| RDS(on) at VGS=10V | — | 65 mΩ typical |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.5 V (logic level) |
| Total Power Dissipation (Ptot) | — | 43 W |
| Gambaran Suhu Operasi | — | -55°C to +175°C |
| Avalanche Rating | — | 100% Avalanche Tested |
| Automotive Qualification | — | AEC-Q101 Qualified |
| RoHS Compliance | — | RoHS Compliant (Green Product) |
| Packaging | — | Tape & Reel (TMA1 suffix) |