IPG20N04S408ATMA1 vs IPG20N06S2L65ATMA1 比較
詳細並排比較 IPG20N04S408ATMA1 由 Infineon 與 IPG20N06S2L65ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPG20N04S408ATMA1 | IPG20N06S2L65ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | Dual N-Channel | Dual N-Channel, Logic Level |
| Technology | OptiMOS (trench MOSFET) | OptiMOS-T2 (Planar Trench 55V) |
| Drain-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D, per channel) | 20 A at 25 degC case | — |
| R_DS(on) max @ V_GS=10V | 7.6 mOhm | — |
| Maximum Power Dissipation (P_D) | 65 W | — |
| 工作接面溫度 | -55 degC to +175 degC | — |
| 封裝 | PG-TDSON-8-4 (SuperSO8 dual) | PG-TDSON-8-4 (TDSON-8 EP) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | MSL1 (260 degC peak reflow) | MSL1 (260°C peak reflow) |
| AEC-Q101 Qualified | Yes | — |
| RoHS 狀態 | Compliant (Green Product) | — |
| Avalanche Rated | 100 percent tested | — |
| Channel Count | 2 (independent) | — |
| Operating Mode | Enhancement mode, Normal Level | — |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) | — | 20 A per channel |
| RDS(on) at VGS=10V | — | 65 mΩ typical |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.5 V (logic level) |
| Total Power Dissipation (Ptot) | — | 43 W |
| 工作溫度範圍 | — | -55°C to +175°C |
| Avalanche Rating | — | 100% Avalanche Tested |
| Automotive Qualification | — | AEC-Q101 Qualified |
| RoHS Compliance | — | RoHS Compliant (Green Product) |
| Packaging | — | Tape & Reel (TMA1 suffix) |