IPN95R3K7P7ATMA1 vs IPD80R1K4P7ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPN95R3K7P7ATMA1 disebabkan oleh Infineon dan IPD80R1K4P7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPN95R3K7P7ATMA1 | IPD80R1K4P7ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS P7 |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 950 V | 800 V |
| Continuous Drain Current (ID) at Tc | 2.0 A | — |
| Power Dissipation (Pd) at Tc | 6 W | — |
| On-State Resistance (RDS(on)) max | 3700 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Technology | Super-junction (CoolMOS P7) | N-Channel Superjunction |
| Kemasan | PG-SOT223 (3-pin + tab, surface mount) | PG-TO252-2 (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Hubungan Operasi | -55 C to +150 C | -55C to +150C |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Aras MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Continuous Drain Current (ID) at Tc=25C | — | 4 A |
| On-Resistance (RDS(on)) typ/max | — | 1.2 ohm typ / 1.4 ohm max |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V (typ) |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg value] |
| Pembuangan Kuasa (Ptot) | — | 32 W |
| Kiraan Pin | — | 3 (Gate, Drain/Tab, Source) |
| REACH Status | — | Compliant |
| Avalanche Energy Rated | — | Yes |
| Body Diode | — | Integrated, fast recovery |