IPN95R3K7P7ATMA1 vs IPD80R1K4P7ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPN95R3K7P7ATMA1 sa pamamagitan ng Infineon at IPD80R1K4P7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD80R1K4P7ATMA1 IPD80R1K4P7ATMA1 - 800V CoolMOS P7 MOSFET | Infineon

IPD80R1K4P7ATMA1 - 800V CoolMOS P7 MOSFET | Infineon

IPD80R1K4P7ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPN95R3K7P7ATMA1 IPD80R1K4P7ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 CoolMOS P7
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 950 V 800 V
Continuous Drain Current (ID) at Tc 2.0 A —
Power Dissipation (Pd) at Tc 6 W —
On-State Resistance (RDS(on)) max 3700 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typ] —
Technology Super-junction (CoolMOS P7) N-Channel Superjunction
Packhaging PG-SOT223 (3-pin + tab, surface mount) PG-TO252-2 (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature ng Junction na Operasyon -55 C to +150 C -55C to +150C
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Level ng MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Continuous Drain Current (ID) at Tc=25C — 4 A
On-Resistance (RDS(on)) typ/max — 1.2 ohm typ / 1.4 ohm max
Gate Threshold Voltage (VGS(th)) — 3.5 V (typ)
Gate Charge (Qg) typ — [DATA_NEEDED: Qg value]
Pwersang Pinahihigpit (Ptot) — 32 W
Bilang ng Pin — 3 (Gate, Drain/Tab, Source)
REACH Status — Compliant
Avalanche Energy Rated — Yes
Body Diode — Integrated, fast recovery

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