IPP069N20NM6AKSA1 vs IRFB4020PBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPP069N20NM6AKSA1 disebabkan oleh Infineon dan IRFB4020PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPP069N20NM6AKSA1 IRFB4020PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 200 V 200 V
Continuous Drain Current (ID) at TC=25C 136 A —
Continuous Drain Current (ID) at TA=25C 15.3 A —
Power Dissipation (PD) at TC=25C 300 W —
Power Dissipation (PD) at TA=25C 3.8 W —
On-Resistance RDS(on) max at VGS=10V 6.9 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Total Gate Charge at VGS=10V (Qg) [DATA_NEEDED: Qg value] —
Gambaran Suhu Operasi -55C to +175C —
Kemasan PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) TO-220AB (through-hole)
Jenis Pemasangan Through Hole Through Hole
Technology OptiMOS 6 trench MOSFET IR MOSFET (HEXFET)
Status RoHS Compliant —
Lead-Free Yes —
Aras MSL N/A (through-hole package) —
Tab Connection Electrically connected to Drain —
Continuous Drain Current (ID) at TC — 18 A
Power Dissipation (PD) at TC — 100 W
RDS(on) Maximum — 100 mOhm
Gate-Source Voltage (VGS) Maximum — 20 V
Thermal Resistance, Junction-to-Case (RthJC) — 1.43 C/W
Suhu Hubungan Operasi — 175 C (max)
Kiraan Pin — 3 (Gate, Drain, Source)
Lead-Free (PbF suffix) — Yes
Market Qualification — Consumer
Recommended Use — Class-D audio amplifier and high-efficiency switching applications

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